ST is pushing GaN power technology further with its latest 700V PowerGaN devices, designed to handle the growing power demands of AI infrastructure, robotics, and industrial systems while improving overall energy efficiency.
Built on gallium nitride, these new additions to ST’s STPOWER portfolio go beyond the limitations of traditional silicon, offering higher efficiency and significantly greater power density.
That matters in robotics and automation, where compact, thermally efficient power systems directly translate to better performance, reliability, and design flexibility.
ST’s new PowerGaN devices are engineered for high-voltage operation up to 700V, enabling stable, high-power performance alongside higher switching frequencies.
In practical terms, this allows designers to shrink power supply size while improving efficiency an important advantage for robotics platforms that need to balance power, weight, and thermal constraints.
The underlying GaN technology brings several key benefits:
- Lower conduction losses,
- Minimal switching losses even at high frequencies,
- Zero reverse-recovery charge.
Together, these characteristics help reduce heat generation and system size, making them particularly well-suited for robotics, industrial automation, and smart energy systems where efficiency and compactness are critical.
The 700V PowerGaN transistors are already in production and available through ST’s eStore and distribution network, with pricing ranging from $0.63 to $2.25 at volumes of 1,000 units.
Leadership Comment
“Broadening our PowerGaN portfolio with new 700V devices extends the benefits of gallium-nitride technology into medium-power and high-power applications,” said Mario Aleo, Executive Vice President, Power & Discrete Sub-Group, STMicroelectronics. “We will continue to expand the portfolio with additional voltage ratings and features, reinforcing our commitment to GaN for tomorrow’s AI servers, humanoid robotics, industrial power, and advanced consumer power applications including home appliances.”
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